文献
J-GLOBAL ID:201902286989930735
整理番号:19A1413957
原子層堆積SiO_2/Al_2O_3スタックによるn型ドープブラックシリコンの表面不動態化【JST・京大機械翻訳】
Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks
著者 (6件):
van de Loo B. W. H.
(Department of Applied physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands)
,
Ingenito A.
(Delft University of Technology, Department of Electrical Engineering, Mathematics and Computer Science, Mekelweg 4, 2628 CD Delft, The Netherlands)
,
Verheijen M. A.
(Department of Applied physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands)
,
Isabella O.
(Delft University of Technology, Department of Electrical Engineering, Mathematics and Computer Science, Mekelweg 4, 2628 CD Delft, The Netherlands)
,
Zeman M.
(Delft University of Technology, Department of Electrical Engineering, Mathematics and Computer Science, Mekelweg 4, 2628 CD Delft, The Netherlands)
,
Kessels W. M. M.
(Department of Applied physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
26
ページ:
263106-263106-4
発行年:
2017年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)