文献
J-GLOBAL ID:201902287209749826
整理番号:19A1413997
Ge量子井戸における低密度2次元正孔の有効g因子【JST・京大機械翻訳】
Effective g factor of low-density two-dimensional holes in a Ge quantum well
著者 (6件):
Lu T. M.
(Sandia National Laboratories, Albuquerque, New Mexico 87185, USA)
,
Harris C. T.
(Sandia National Laboratories, Albuquerque, New Mexico 87185, USA)
,
Huang S.-H.
(Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei 10617, Taiwan)
,
Chuang Y.
(Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei 10617, Taiwan)
,
Li J.-Y.
(Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei 10617, Taiwan)
,
Liu C. W.
(Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei 10617, Taiwan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
111
号:
10
ページ:
102108-102108-4
発行年:
2017年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)