文献
J-GLOBAL ID:201902287319912566
整理番号:19A0626043
分子ビームエピタクシーによるGaP成長に対するGa吸着原子拡散長の評価【JST・京大機械翻訳】
Estimation of Ga adatom diffusion length for GaP growth by molecular beam epitaxy
著者 (8件):
Piedra-Lorenzana Jose A.
(Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan)
,
Yamane Keisuke
(Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan)
,
Shiota Koki
(Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan)
,
Fujimoto Junya
(Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan)
,
Tanaka Shunsuke
(Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan)
,
Sekiguchi Hiroto
(Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan)
,
Okada Hiroshi
(Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan)
,
Wakahara Akihiro
(Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
512
ページ:
37-40
発行年:
2019年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)