文献
J-GLOBAL ID:201902287415453273
整理番号:19A0660884
Al_2O_3/In_2O_3界面における短範囲規則化二次元Electronガスチャンネルの生成【JST・京大機械翻訳】
Creation of a Short-Range Ordered Two-Dimensional Electron Gas Channel in Al2O3/In2O3 Interfaces
著者 (5件):
Lee Sang Yeon
(Department of Energy Systems Research & Department of Materials Science and Engineering, Ajou University, Republic of Korea)
,
Kim Jinseo
(Department of Energy Systems Research & Department of Materials Science and Engineering, Ajou University, Republic of Korea)
,
Park Ayoung
(Department of Energy Systems Research & Department of Materials Science and Engineering, Ajou University, Republic of Korea)
,
Park Jucheol
(Gyeongbuk Science Technology Promotion Center, Gumi Electronics & Information Technology Research Institute, Republic of Korea)
,
Seo Hyungtak
(Department of Energy Systems Research & Department of Materials Science and Engineering, Ajou University, Republic of Korea)
資料名:
ACS Nano
(ACS Nano)
巻:
11
号:
6
ページ:
6040-6047
発行年:
2017年
JST資料番号:
W2326A
ISSN:
1936-0851
CODEN:
ANCAC3
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)