文献
J-GLOBAL ID:201902288182900079
整理番号:19A1409318
単結晶有機電界効果トランジスタにおける偏光依存光誘起Bias-応力効果【JST・京大機械翻訳】
Polarization-Dependent Photoinduced Bias-Stress Effect in Single-Crystal Organic Field-Effect Transistors
著者 (11件):
Choi Hyun Ho
(Department of Physics, Rutgers University)
,
Choi Hyun Ho
(Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), South Korea)
,
Najafov Hikmet
(Department of Physics, Rutgers University)
,
Kharlamov Nikolai
(National University of Science and Technology MISiS, Russia)
,
Kuznetsov Denis V.
(National University of Science and Technology MISiS, Russia)
,
Didenko Sergei I.
(National University of Science and Technology MISiS, Russia)
,
Cho Kilwon
(Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), South Korea)
,
Briseno Alejandro L.
(Department of Polymer Science & Engineering, University of Massachusetts, Massachusetts, United States)
,
Podzorov Vitaly
(Department of Physics, Rutgers University)
,
Podzorov Vitaly
(Institute for Advanced Materials and Devices for Nanotechnology, Rutgers University)
,
Podzorov Vitaly
(National University of Science and Technology MISiS, Russia)
資料名:
ACS Applied Materials & Interfaces
(ACS Applied Materials & Interfaces)
巻:
9
号:
39
ページ:
34153-34161
発行年:
2017年10月04日
JST資料番号:
W2329A
ISSN:
1944-8244
CODEN:
AAMICK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)