文献
J-GLOBAL ID:201902291885601281
整理番号:19A0510515
タイプII InAsN/GaSb歪量子井戸レーザダイオードにおける光学利得とその圧力依存性【JST・京大機械翻訳】
Optical Gain in Type-II InAsN/GaSb Strained Quantum Wells Laser Diodes and Its Pressure Dependence
著者 (4件):
Ben Ahmed Amira
(Basic Sciences Department, Deanship of Preparatory Year and Supporting Studies, University of Dammam, Dammam, Saudi Arabia)
,
Saidi Hosni
(Physics Department, Faculty of Sciences, Advanced Materials and Quantum Phenomena Laboratory, University of Tunis-El Manar, Tunis, Tunisia)
,
Msahli Melek
(Physics Department, Faculty of Sciences, Advanced Materials and Quantum Phenomena Laboratory, University of Tunis-El Manar, Tunis, Tunisia)
,
Ridene Said
(Physics Department, Faculty of Sciences, Advanced Materials and Quantum Phenomena Laboratory, University of Tunis-El Manar, Tunis, Tunisia)
資料名:
IEEE Journal of Quantum Electronics
(IEEE Journal of Quantum Electronics)
巻:
53
号:
2
ページ:
ROMBUNNO.2500109.1-8
発行年:
2017年
JST資料番号:
H0432A
ISSN:
0018-9197
CODEN:
IEJQA7
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)