文献
J-GLOBAL ID:201902295445081190
整理番号:19A2307149
カチオン性窒素によるグラフェンのp型ドーピング【JST・京大機械翻訳】
p-Type Doping of Graphene with Cationic Nitrogen
著者 (6件):
Chae Sangwoo
(Department of Chemical Systems Engineering, Graduate School of Engineering, Nagoya University, Japan)
,
Panomsuwan Gasidit
(Department of Materials Engineering, Faculty of Engineering, Kasetsart University, Thailand)
,
Bratescu Maria Antoaneta
(Department of Chemical Systems Engineering, Graduate School of Engineering, Nagoya University, Japan)
,
Teshima Katsuya
(Department of Materials Chemistry, Faculty of Engineering, Shinshu University, Japan)
,
Saito Nagahiro
(Department of Chemical Systems Engineering, Graduate School of Engineering, Nagoya University, Japan)
,
Saito Nagahiro
(Conjoint Research Laboratory in Nagoya University, Shinshu University, Japan)
資料名:
ACS Applied Nano Materials
(ACS Applied Nano Materials)
巻:
2
号:
3
ページ:
1350-1355
発行年:
2019年
JST資料番号:
W5033A
ISSN:
2574-0970
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)