文献
J-GLOBAL ID:201902296575200966
整理番号:19A0515264
高性能くし形背面接触太陽電池のためのp+およびn+シリコン表面の独立Al2O3/SiNx:HおよびSiO2/SiNx:H不動態化【JST・京大機械翻訳】
Independent Al2O3/SiNx:H and SiO2/SiN x:H Passivation of p+ and n+ Silicon Surfaces for High-Performance Interdigitated Back Contact Solar Cells
著者 (7件):
Chen Yizhan
(School of Applied Physics and Materials, Wuyi University, Jiangmen, China)
,
Yang Yang
(State Key Laboratory of PV Science and Technology, Trina Solar Limited Company, Changzhou, China)
,
Marmon Jason K.
(Nanoscale Science Program, the Department of Electrical and Computer Engineering, and the Center for Optoelectronics and Optical Communications, University of North Carolina at Charlotte, Charlotte, NC, USA)
,
Zhang Xueling
(State Key Laboratory of PV Science and Technology, Trina Solar Limited Company, Changzhou, China)
,
Feng Zhiqiang
(State Key Laboratory of PV Science and Technology, Trina Solar Limited Company, Changzhou, China)
,
Verlinden Pierre J.
(State Key Laboratory of PV Science and Technology, Trina Solar Limited Company, Changzhou, China)
,
Shen Hui
(State Key Laboratory of PV Science and Technology, Trina Solar Limited Company, Changzhou, China)
資料名:
IEEE Journal of Photovoltaics
(IEEE Journal of Photovoltaics)
巻:
7
号:
1
ページ:
51-57
発行年:
2017年
JST資料番号:
W2305A
ISSN:
2156-3381
CODEN:
IJPEG8
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)