文献
J-GLOBAL ID:202002210139503070
整理番号:20A2501582
InSb-Al_2O_3MOSキャパシタに及ぼすHCl洗浄の影響【JST・京大機械翻訳】
Effect of HCl cleaning on InSb-Al2O3 MOS capacitors
著者 (8件):
Vavasour Oliver J
(School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom)
,
Jefferies Richard
(School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom)
,
Walker Marc
(Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom)
,
Roberts Joseph W
(School of Engineering, University of Liverpool, Liverpool, L69 3GH, United Kingdom)
,
Meakin Naomi R
(School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom)
,
Gammon Peter M
(School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom)
,
Chalker Paul R
(School of Engineering, University of Liverpool, Liverpool, L69 3GH, United Kingdom)
,
Ashley Tim
(School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
34
号:
3
ページ:
035032 (7pp)
発行年:
2019年
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)