文献
J-GLOBAL ID:202002212830602143
整理番号:20A0434044
深い極低温まで動作するSiGe HBTのDCおよびRF可変性【JST・京大機械翻訳】
DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures
著者 (9件):
Ying Hanbin
(Georgia Tech,School of Electrical and Computer Engineering,Atlanta,GA,USA,30332-0250)
,
Teng Jeffrey W.
(Georgia Tech,School of Electrical and Computer Engineering,Atlanta,GA,USA,30332-0250)
,
Tzintzarov George N.
(Georgia Tech,School of Electrical and Computer Engineering,Atlanta,GA,USA,30332-0250)
,
Omprakash Anup P.
(Georgia Tech,School of Electrical and Computer Engineering,Atlanta,GA,USA,30332-0250)
,
Rao Sunil G.
(Georgia Tech,School of Electrical and Computer Engineering,Atlanta,GA,USA,30332-0250)
,
Raghunathan Uppili
(Georgia Tech,School of Electrical and Computer Engineering,Atlanta,GA,USA,30332-0250)
,
Ildefonso Adrian
(Georgia Tech,School of Electrical and Computer Engineering,Atlanta,GA,USA,30332-0250)
,
Fernandez Martin S.
(Georgia Tech,School of Electrical and Computer Engineering,Atlanta,GA,USA,30332-0250)
,
Cressler John D.
(Georgia Tech,School of Electrical and Computer Engineering,Atlanta,GA,USA,30332-0250)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
BCICTS
ページ:
1-4
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)