文献
J-GLOBAL ID:202002213029074365
整理番号:20A0630551
InGaAsN量子井戸とInAs/InGaAs量子ドットに基づく注入マイクロディスクレーザの比較解析【JST・京大機械翻訳】
Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots
著者 (10件):
Moiseev E. I.
(St. Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, Russia)
,
Maximov M. V.
(St. Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, Russia)
,
Kryzhanovskaya N. V.
(St. Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, Russia)
,
Kryzhanovskaya N. V.
(Peter the Great Polytechnic University, St. Petersburg, Russia)
,
Simchuk O. I.
(St. Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, Russia)
,
Kulagina M. M.
(Ioffe Institute, St. Petersburg, Russia)
,
Kadinskaya S. A.
(St. Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, Russia)
,
Guina M.
(Tampere University of Technology, Tampere, Finland)
,
Zhukov A. E.
(St. Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, Russia)
,
Zhukov A. E.
(Peter the Great Polytechnic University, St. Petersburg, Russia)
資料名:
Semiconductors
(Semiconductors)
巻:
54
号:
2
ページ:
263-267
発行年:
2020年
JST資料番号:
T0093A
ISSN:
1063-7826
CODEN:
SMICES
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)