文献
J-GLOBAL ID:202002214462460475
整理番号:20A0433232
界面トラップ電荷を含むSiC MOSFETの短絡故障モデル【JST・京大機械翻訳】
Short-Circuit Failure Model of SiC MOSFET Including the Interface Trapped Charges
著者 (5件):
Zhou Yuming
(School of Electrical and Information Engineering, Anhui University of Technology, Maanshan, China)
,
Liu Hangzhi
(College of Electrical and Information Engineering, Hunan University, Changsha, China)
,
Mu Shilu
(School of Electrical and Information Engineering, Anhui University of Technology, Maanshan, China)
,
Chen Zhaoquan
(School of Electrical and Information Engineering, Anhui University of Technology, Maanshan, China)
,
Wang Bing
(School of Electrical and Information Engineering, Anhui University of Technology, Maanshan, China)
資料名:
IEEE Journal of Emerging and Selected Topics in Power Electronics
(IEEE Journal of Emerging and Selected Topics in Power Electronics)
巻:
8
号:
1
ページ:
90-98
発行年:
2020年
JST資料番号:
W2402A
ISSN:
2168-6777
CODEN:
IJESN2
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)