文献
J-GLOBAL ID:202002214695694201
整理番号:20A0769723
フォトダイオード応用のためのAl/PCBM:ZnO/p-Siヘテロ接合の電気的性質【JST・京大機械翻訳】
Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application
著者 (4件):
Gullu H.H.
(Department of Electrical and Electronics Engineering, Faculty of Engineering, Atilim University, 06836, Ankara, Turkey)
,
Yildiz D.E.
(Department of Physics, Faculty of Arts and Sciences, Hitit University, 19030, Corum, Turkey)
,
Kocyigit A.
(Department of Electrical and Electronics Engineering, Faculty of Engineering, Igdir University, 76000, Igdir, Turkey)
,
Yildirim M.
(Department of Biotechnology, Faculty of Science, Selcuk University, 42130, Konya, Turkey)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
827
ページ:
Null
発行年:
2020年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)