文献
J-GLOBAL ID:202002215731352894
整理番号:20A1110586
HNO_3分子ドーピングによるTiO_2修飾CVD成長単層グラフェンの電気的性質の調整【JST・京大機械翻訳】
Tailoring of electrical properties of TiO2 decorated CVD grown single-layer graphene by HNO3 molecular doping
著者 (5件):
Kumar Singh Anand
(Department of Electronics & Communication Engineering, Institute of Engineering and Technology, Lucknow 226021, India)
,
Chaudhary Vivek
(Department of Physics, Motilal Nehru National Institute of Technology Allahabad, Prayagraj, 211004, India)
,
Kumar Singh Arun
(Department of Physics, Motilal Nehru National Institute of Technology Allahabad, Prayagraj, 211004, India)
,
Kumar Singh Arun
(Department of Pure and Applied Physics, Guru Ghasidas Vishwavidyalaya, Bilaspur 495009 CG, India)
,
Sinha S.R.P.
(Department of Electronics & Communication Engineering, Institute of Engineering and Technology, Lucknow 226021, India)
資料名:
Synthetic Metals
(Synthetic Metals)
巻:
264
ページ:
Null
発行年:
2020年
JST資料番号:
C0123B
ISSN:
0379-6779
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)