文献
J-GLOBAL ID:202002216379777352
整理番号:20A1235939
n型4H-SiC上のNi/Nbオーム接触における接触抵抗と高温信頼性の改善のためのCF4:O2表面エッチング
CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC
著者 (12件):
Van Cuong Vuong
(Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8527, Japan)
,
Van Cuong Vuong
(Hanoi National University of Education, 136 Xuan Thuy Street, Cau Giay, Hanoi, Vietnam)
,
Miyazaki Takamichi
(School of Engineering, Tohoku University, Aramaki, Aoba-ku, Sendai, Japan)
,
Ishikawa Seiji
(Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8527, Japan)
,
Ishikawa Seiji
(Phenitec Semiconductor Corp., 150, Kinoko-cho, Ibara, Okayama, 715-8602, Japan)
,
Maeda Tomonori
(Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8527, Japan)
,
Maeda Tomonori
(Phenitec Semiconductor Corp., 150, Kinoko-cho, Ibara, Okayama, 715-8602, Japan)
,
Sezaki Hiroshi
(Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8527, Japan)
,
Sezaki Hiroshi
(Phenitec Semiconductor Corp., 150, Kinoko-cho, Ibara, Okayama, 715-8602, Japan)
,
Yasuno Satoshi
(Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo, Hyogo, 679-5198, Japan)
,
Koganezawa Tomoyuki
(Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo, Hyogo, 679-5198, Japan)
,
Kuroki Shin-Ichiro
(Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8527, Japan)
資料名:
Japanese Journal of Applied Physics
(Japanese Journal of Applied Physics)
巻:
59
号:
5
ページ:
056501 (6pp)
発行年:
2020年05月
JST資料番号:
G0520B
ISSN:
0021-4922
CODEN:
JJAPB6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)