文献
J-GLOBAL ID:202002217203767078
整理番号:20A1026256
低圧化学蒸着によるグラフェン核形成の抑制に及ぼす銅基板上の異なる厚さの酸化物層の影響【JST・京大機械翻訳】
Effects of the oxide layer with different thicknesses on copper substrate on depressing graphene nucleation by low pressure chemical vapor deposition
著者 (5件):
Shi Yonggui
(School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China)
,
Wang Yunwei
(School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China)
,
Wang Yunwei
(School of Biological and Chemical Engineering, Panzhihua University, Panzhihua 617000, China)
,
Ren Yang
(School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China)
,
Sang Zhaojun
(School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
541
ページ:
Null
発行年:
2020年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)