文献
J-GLOBAL ID:202002218042856535
整理番号:20A0281428
有望な電子特性を持つNb_2サイト_4とNb_2GeTe_4における二次元強弾性半導体【JST・京大機械翻訳】
Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties
著者 (6件):
Zhang Ting
(School of Physics, State Key Laboratory of Crystal Materials, Shandong University, China)
,
Ma Yandong
(School of Physics, State Key Laboratory of Crystal Materials, Shandong University, China)
,
Xu Xilong
(School of Physics, State Key Laboratory of Crystal Materials, Shandong University, China)
,
Lei Chengan
(School of Physics, State Key Laboratory of Crystal Materials, Shandong University, China)
,
Huang Baibiao
(School of Physics, State Key Laboratory of Crystal Materials, Shandong University, China)
,
Dai Ying
(School of Physics, State Key Laboratory of Crystal Materials, Shandong University, China)
資料名:
Journal of Physical Chemistry Letters
(Journal of Physical Chemistry Letters)
巻:
11
号:
2
ページ:
497-503
発行年:
2020年
JST資料番号:
W3687A
ISSN:
1948-7185
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)