文献
J-GLOBAL ID:202002218624065574
整理番号:20A1936607
第一原理を用いたGe中の低速イオンに対するチャネリング条件下での電子阻止能【JST・京大機械翻訳】
Electronic stopping power under channeling conditions for slow ions in Ge using first principles
著者 (11件):
Fu Yan-Long
(The Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China)
,
Fu Yan-Long
(Beijing Radiation Center, Beijing 100875, China)
,
Li Chang-Kai
(The Institude of Technological Science, Wuhan University, Wuhan 430072, China)
,
Sang Hai-Bo
(The Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China)
,
Sang Hai-Bo
(Beijing Radiation Center, Beijing 100875, China)
,
Cheng Wei
(The Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China)
,
Cheng Wei
(Beijing Radiation Center, Beijing 100875, China)
,
Cheng Wei
(Ningbo Institute of Industrial Technology, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China)
,
Zhang Feng-Shou
(The Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China)
,
Zhang Feng-Shou
(Beijing Radiation Center, Beijing 100875, China)
,
Zhang Feng-Shou
(Center of Theoretical Nuclear Physics, National Laboratory of Heavy Ion Accelerator of Lanzhou, Lanzhou 730000, China)
資料名:
Physical Review. A
(Physical Review. A)
巻:
102
号:
1
ページ:
012803
発行年:
2020年
JST資料番号:
D0323D
ISSN:
2469-9926
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)