文献
J-GLOBAL ID:202002219056906098
整理番号:20A2258188
a-IGZO薄膜トランジスタの高安定性に及ぼす二段階アニーリングの効果【JST・京大機械翻訳】
Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor
著者 (5件):
Peng Cong
(Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China)
,
Yang Shibo
(Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China)
,
Pan Chengchao
(Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China)
,
Li Xifeng
(Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China)
,
Zhang Jianhua
(Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
67
号:
10
ページ:
4262-4268
発行年:
2020年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)