文献
J-GLOBAL ID:202002220361177493
整理番号:20A0656399
高性能オプトエレクトロニクスデバイスアレイのための単分子層二硫化モリブデンにおける原子空孔制御と元素置換【JST・京大機械翻訳】
Atomic Vacancy Control and Elemental Substitution in a Monolayer Molybdenum Disulfide for High Performance Optoelectronic Device Arrays
著者 (10件):
Chee Sang-Soo
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea)
,
Lee Won-June
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea)
,
Jo Yong-Ryun
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea)
,
Cho Min Kyung
(Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea)
,
Chun DongWon
(Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea)
,
Baik Hionsuck
(Korea Basic Science Institute (KBSI), Seoul, 02841, Republic of Korea)
,
Kim Bong-Joong
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea)
,
Yoon Myung-Han
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea)
,
Lee Kayoung
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea)
,
Ham Moon-Ho
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
30
号:
11
ページ:
e1908147
発行年:
2020年
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)