文献
J-GLOBAL ID:202002220635095820
整理番号:20A0625556
組成傾斜AlGaNナノ構造:歪分布とX線回折逆空間マッピング【JST・京大機械翻訳】
Compositionally Graded AlGaN Nanostructures: Strain Distribution and X-ray Diffraction Reciprocal Space Mapping
著者 (10件):
Stanchu H.
(Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, P.R. China)
,
Stanchu H.
(Institute for Nanoscience and Engineering, University of Arkansas, United States)
,
Auf der Maur M.
(Department of Electronic Engineering, University of Rome Tor Vergata, Italy)
,
Kuchuk A. V.
(Institute for Nanoscience and Engineering, University of Arkansas, United States)
,
Mazur Yu. I.
(Institute for Nanoscience and Engineering, University of Arkansas, United States)
,
Sobanska M.
(Institute of Physics Polish Academy of Sciences, Poland)
,
Zytkiewicz Z. R.
(Institute of Physics Polish Academy of Sciences, Poland)
,
Wu S.
(Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, P.R. China)
,
Wang Z.
(Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, P.R. China)
,
Salamo G.
(Institute for Nanoscience and Engineering, University of Arkansas, United States)
資料名:
Crystal Growth & Design
(Crystal Growth & Design)
巻:
20
号:
3
ページ:
1543-1551
発行年:
2020年
JST資料番号:
W1323A
ISSN:
1528-7483
CODEN:
CGDEFU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)