文献
J-GLOBAL ID:202002222533886970
整理番号:20A0033135
GaAs/GaAsBiコア-シェルナノワイヤにおけるバイプロボックナノ構造形成の制御【JST・京大機械翻訳】
Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell Nanowires
著者 (10件):
Matsuda Teruyoshi
(Graduate School of Science and Engineering, Ehime University, Ehime, Japan)
,
Takada Kyohei
(Graduate School of Science and Engineering, Ehime University, Ehime, Japan)
,
Yano Kohsuke
(Graduate School of Science and Engineering, Ehime University, Ehime, Japan)
,
Tsutsumi Rikuo
(Graduate School of Science and Engineering, Ehime University, Ehime, Japan)
,
Yoshikawa Kohei
(Graduate School of Science and Engineering, Ehime University, Ehime, Japan)
,
Shimomura Satoshi
(Graduate School of Science and Engineering, Ehime University, Ehime, Japan)
,
Shimizu Yumiko
(Toray Research Center, Shiga, Japan)
,
Nagashima Kazuki
(Institute for Materials Chemistry and Engineering, Kyushu University, Japan)
,
Yanagida Takeshi
(Institute for Materials Chemistry and Engineering, Kyushu University, Japan)
,
Ishikawa Fumitaro
(Graduate School of Science and Engineering, Ehime University, Ehime, Japan)
資料名:
Nano Letters
(Nano Letters)
巻:
19
号:
12
ページ:
8510-8518
発行年:
2019年
JST資料番号:
W1332A
ISSN:
1530-6984
CODEN:
NALEFD
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)