文献
J-GLOBAL ID:202002223063101170
整理番号:20A0420251
(In,Fe)Sb/GaAs/InGaAsダイオードの作製と発光特性【JST・京大機械翻訳】
Fabrication and luminescent properties of(In,Fe)Sb/GaAs/InGaAs diodes
著者 (7件):
Ved M. V.
(Research Institute for Physics and Technology of Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia)
,
Dorokhin M.V.
(Research Institute for Physics and Technology of Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia)
,
Lesnikov V. P.
(Research Institute for Physics and Technology of Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia)
,
Zdoroveyshchev A.V.
(Research Institute for Physics and Technology of Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia)
,
Danilov Yu.A.
(Research Institute for Physics and Technology of Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia)
,
Demina P.B.
(Research Institute for Physics and Technology of Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia)
,
Kudrin A. V.
(Research Institute for Physics and Technology of Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia)
資料名:
Journal of Physics: Conference Series
(Journal of Physics: Conference Series)
巻:
1410
号:
1
ページ:
012053 (4pp)
発行年:
2019年
JST資料番号:
W5565A
ISSN:
1742-6588
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)