文献
J-GLOBAL ID:202002223287364535
整理番号:20A0221140
0.18μm SiGe BiCMOSプロセスに基づくXバンド4 ・4 on-Chip Butler Matrixの設計【JST・京大機械翻訳】
Design of X-band 4・4 On-chip Butler Matrix Based on 0.18μm SiGe BiCMOS Process
著者 (6件):
Tao Xiaohui
(University of Science and Technology of China,School of Information Science and Technology,Hefei,China)
,
Cao Rui
(Key Lab. of Aperture Array and Space Application, CETC38,Hefei,China)
,
Li Zhuang
(Key Lab. of Aperture Array and Space Application, CETC38,Hefei,China)
,
Rong Dawei
(Key Lab. of Aperture Array and Space Application, CETC38,Hefei,China)
,
Jiang Lihui
(Key Lab. of Aperture Array and Space Application, CETC38,Hefei,China)
,
Sun Liguo
(University of Science and Technology of China,School of Information Science and Technology,Hefei,China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
ICCT
ページ:
805-809
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)