文献
J-GLOBAL ID:202002223667824381
整理番号:20A2618002
ヒ素注入Hg_0.7Cd_0.3Te膜における放射線ドナー欠陥の蓄積とアニーリング【JST・京大機械翻訳】
Accumulation and Annealing of Radiation Donor Defects in Arsenic-Implanted Hg0.7Cd0.3Te Films
著者 (11件):
Voitsekhovskii Alexandr
(Tomsk State University,36 Lenin, Tomsk,Russia,634050)
,
Korotaev Alexandr
(Tomsk State University,36 Lenin, Tomsk,Russia,634050)
,
Izhnin Ihor
(Scientific Research Company “Electron-Carat”,202 Stryysyka Str., Lviv,Ukraine,79031)
,
Mynbaev Karim
(Ioffe Institute,26 Polytechnicheskaya Str., Saint-Petersburg,Russia,194021)
,
Yakushev Maxim
(A.V. Rzhanov Institute of Semiconductor Physics SB RAS,13 Ac. Lavrentieva, Novosibirsk,Russia,630090)
,
Mikhailov Nikolaj
(A.V. Rzhanov Institute of Semiconductor Physics SB RAS,13 Ac. Lavrentieva, Novosibirsk,Russia,630090)
,
Varavin Vasilij
(A.V. Rzhanov Institute of Semiconductor Physics SB RAS,13 Ac. Lavrentieva, Novosibirsk,Russia,630090)
,
Dvoretsky Sergej
(A.V. Rzhanov Institute of Semiconductor Physics SB RAS,13 Ac. Lavrentieva, Novosibirsk,Russia,630090)
,
Marin Denis
(A.V. Rzhanov Institute of Semiconductor Physics SB RAS,13 Ac. Lavrentieva, Novosibirsk,Russia,630090)
,
Fitsych Olena
(P. Sagaidachny National Army Academy,32 Gvardijska Str., Lviv,Ukraine,79012)
,
Kurbanov Kurban
(Kremenchug Flight College,17 Pobedy Str., Kremenchug,Ukraine,39600)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
EFRE
ページ:
1004-1008
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)