文献
J-GLOBAL ID:202002223950681632
整理番号:20A0493611
低電力消費によるナノスケール神経形態メモリスタアレイの実現【JST・京大機械翻訳】
Realization of Nanoscale Neuromorphic Memristor Array with Low Power Consumption
著者 (8件):
Cheng Caidie
(State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing,Beijing,China,100083)
,
Zhang Teng
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University,Department of Micro/nanoelectronics,Beijing,China,100871)
,
Liu Chang
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University,Department of Micro/nanoelectronics,Beijing,China,100871)
,
Zhu Jiadi
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University,Department of Micro/nanoelectronics,Beijing,China,100871)
,
Xu Liying
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University,Department of Micro/nanoelectronics,Beijing,China,100871)
,
Yan Xiaoqin
(State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing,Beijing,China,100083)
,
Yang Yuchao
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University,Department of Micro/nanoelectronics,Beijing,China,100871)
,
Huang Ru
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University,Department of Micro/nanoelectronics,Beijing,China,100871)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
ASICON
ページ:
1-4
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)