文献
J-GLOBAL ID:202002224616755809
整理番号:20A2258220
電界Electron放出とそのゲートデバイスを強化するための集積空間電荷制限伝導Schottky接合を持つSiナノワイヤ【JST・京大機械翻訳】
Si Nanowire With Integrated Space-Charge- Limited Conducted Schottky Junction for Enhancing Field Electron Emission and Its Gated Devices
著者 (9件):
Zeng Miaoxuan
(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China)
,
Huang Yifeng
(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China)
,
Lu Yaowen
(Beijing Orient Institute ofMeasurement and Test, Beijing, China)
,
Yu Jiajie
(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China)
,
Gu Zengjie
(National Key Laboratory of Science and Technology on Vacuum Technology and Physics, Lanzhou Institute of Physics, Lanzhou, China)
,
Yang Wei
(National Key Laboratory of Science and Technology on Vacuum Technology and Physics, Lanzhou Institute of Physics, Lanzhou, China)
,
Chen Jun
(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China)
,
She Juncong
(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China)
,
Deng Shaozhi
(State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
67
号:
10
ページ:
4467-4472
発行年:
2020年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)