文献
J-GLOBAL ID:202002225144292854
整理番号:20A0333798
SiCナノ膜の電子構造と光学特性の第一原理研究【JST・京大機械翻訳】
First-principle study of electronic structure and optical properties of SiC nano films
著者 (13件):
Niu Yanan
(College of Materials Science and Engineering, Taiyuan University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024, People’s Republic of China)
,
Niu Yanan
(Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, People’s Republic of China)
,
Hu Huijun
(Shandong Institute of Aerospace Electronics Technology, No. 513, Aerospace Road, Gaoxin District, Yantai 264003, People’s Republic of China)
,
Zhang Wenshu
(College of Materials Science and Engineering, Taiyuan University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024, People’s Republic of China)
,
Zhang Wenshu
(Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, People’s Republic of China)
,
Li Jianguo
(College of Materials Science and Engineering, Taiyuan University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024, People’s Republic of China)
,
Li Jianguo
(Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, People’s Republic of China)
,
Qiao Liqing
(College of Materials Science and Engineering, Taiyuan University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024, People’s Republic of China)
,
Qiao Liqing
(Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, People’s Republic of China)
,
Dong Nan
(College of Materials Science and Engineering, Taiyuan University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024, People’s Republic of China)
,
Dong Nan
(Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, People’s Republic of China)
,
Han Peide
(College of Materials Science and Engineering, Taiyuan University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024, People’s Republic of China)
,
Han Peide
(Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, People’s Republic of China)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
34
号:
11
ページ:
115015 (6pp)
発行年:
2019年
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)