文献
J-GLOBAL ID:202002225279689449
整理番号:20A2476756
BaLaCuS_3の実験的およびDFT研究:直接バンドギャップ半導体【JST・京大機械翻訳】
Experimental and DFT study of BaLaCuS3: Direct band gap semiconductor
著者 (5件):
Oreshonkov A.S.
(Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russia)
,
Oreshonkov A.S.
(School of Engineering and Construction, Siberian Federal University, Krasnoyarsk, 660041, Russia)
,
Azarapin N.O.
(Institute of Chemistry, Tyumen State University, Tyumen, 625003, Russia)
,
Shestakov N.P.
(Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russia)
,
Adichtchev S.V.
(Institute of Automation and Electrometry, Russian Academy of Sciences, Novosibirsk 630090, Russia)
資料名:
Journal of Physics and Chemistry of Solids
(Journal of Physics and Chemistry of Solids)
巻:
148
ページ:
Null
発行年:
2021年
JST資料番号:
C0202A
ISSN:
0022-3697
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)