文献
J-GLOBAL ID:202002225995820093
整理番号:20A2662859
AlN/GaNヘテロ構造IMPATTおよびMITATTダイオードの大信号性能の最適設計【JST・京大機械翻訳】
Optimal Design of Large Signal Performance of AlN/GaN Hetero-Structural IMPATT and MITATT Diodes
著者 (7件):
Wu Ping
(Wenzhou University, College of Electrical and Electronic Engineering, China Zhejiang province)
,
Wei Wen Sheng
(Wenzhou University, College of Electrical and Electronic Engineering, China Zhejiang province)
,
Zheng Jun Ding
(Wenzhou University, College of Electrical and Electronic Engineering, China Zhejiang province)
,
Yang Wei Bo
(Wenzhou University, College of Electrical and Electronic Engineering, China Zhejiang province)
,
Li Chang
(Wenzhou University, College of Electrical and Electronic Engineering, China Zhejiang province)
,
He Ming Chang
(Wenzhou University, College of Electrical and Electronic Engineering, China Zhejiang province)
,
Wan Yi
(Wenzhou University, College of Electrical and Electronic Engineering, China Zhejiang province)
資料名:
Materials Science Forum
(Materials Science Forum)
巻:
1014
ページ:
157-162
発行年:
2020年
JST資料番号:
D0716B
ISSN:
0255-5476
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
スイス (CHE)
言語:
英語 (EN)