文献
J-GLOBAL ID:202002226318472445
整理番号:20A2553475
SiC MOSFETモジュールのゲートドライバ集積接合温度推定【JST・京大機械翻訳】
Gate-Driver Integrated Junction Temperature Estimation of SiC MOSFET Modules
著者 (7件):
Mocevic Slavko
(Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA,24061)
,
Mitrovic Vladimir
(Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA,24061)
,
Wang Jun
(Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA,24061)
,
Burgos Rolando
(Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA,24061)
,
Boroyevich Dushan
(Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,VA,USA,24061)
,
Jaksic Marko
(General Motors Global Propulsion Systems,Pontiac,MI,USA,48340)
,
Teimor Mehrdad
(General Motors Global Propulsion Systems,Pontiac,MI,USA,48340)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
ECCE
ページ:
3761-3768
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)