文献
J-GLOBAL ID:202002229145686987
整理番号:20A0199037
高品質n型Ohm接触を実現するためのAl/n-GaN障壁特性への洞察【JST・京大機械翻訳】
Insight into the Al/N-GaN barrier property to realize high quality n-type Ohmic contact
著者 (8件):
Wang Ting
(Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science and Technology Normal University, Nanchang, 330018, China)
,
Xiong Zhihua
(Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science and Technology Normal University, Nanchang, 330018, China)
,
Zhao Juanli
(Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science and Technology Normal University, Nanchang, 330018, China)
,
Wu Ning
(Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China)
,
Wu Ning
(School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China)
,
Du Kun
(Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science and Technology Normal University, Nanchang, 330018, China)
,
Zhou Mingbin
(Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science and Technology Normal University, Nanchang, 330018, China)
,
Ao Lei
(Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science and Technology Normal University, Nanchang, 330018, China)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
818
ページ:
Null
発行年:
2020年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)