文献
J-GLOBAL ID:202002229606305729
整理番号:20A0910399
V_OV=V_DS=0.5Vにおける無寄生チャネルとL_g=40nmを特徴とする最初の垂直積層張力歪Ge_0.98Si_0.02NGaAsFET,およびV_DS=0.5Vにおける記録G_m,max(μS/μm)/SS_SAT(MV/DEC)=8.3【JST・京大機械翻訳】
First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μA at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V
著者 (7件):
Tu Chien-Te
(National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan)
,
Huang Yu-Shiang
(National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan)
,
Lu Fang-Liang
(National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan)
,
Liu Hsiao-Hsuan
(National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan)
,
Lin Chung-Yi
(National Taiwan University,Graduate Institute of Photonics and Optoelectronics,Taipei,Taiwan)
,
Liu Yi-Chun
(National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan)
,
Liu C. W.
(National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
IEDM
ページ:
29.3.1-29.3.4
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)