文献
J-GLOBAL ID:202002230753798542
整理番号:20A0284212
Mg拡散による低ゲート漏れを持つノーマリオフAlGaN/GaN HEMTを作製するための高効率法【JST・京大機械翻訳】
A highly efficient method to fabricate normally-off AlGaN/GaN HEMTs with low gate leakage via Mg diffusion
著者 (7件):
Wan Lijun
(State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, People’s Republic of China)
,
Sun Peiye
(State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, People’s Republic of China)
,
Liu Xinyao
(State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, People’s Republic of China)
,
Chen Dingbo
(State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, People’s Republic of China)
,
Que Xianfeng
(State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, People’s Republic of China)
,
Yao Shunan
(State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, People’s Republic of China)
,
Li Guoqiang
(State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, People’s Republic of China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
116
号:
2
ページ:
023504-023504-4
発行年:
2020年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)