文献
J-GLOBAL ID:202002231426630787
整理番号:20A0061535
表面ドーピングによるSiC上のエピタキシャルグラフェンのバンドギャップ広がりに関する紫外光電子分光研究【JST・京大機械翻訳】
An ultraviolet photoelectron spectroscopy study on bandgap broadening of epitaxial graphene on SiC with surface doping
著者 (11件):
Hu Yanfei
(School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an, 710071, China)
,
Liu Jialin
(School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an, 710071, China)
,
Dou Wentao
(SICC Co., Ltd, Jinan, 250018, China)
,
Mao Kaili
(Department of Materials Science and Engineering, Xi’an University of Technology, Xi’an, 710048, China)
,
Guo Lixin
(School of Physics and Optoelectronic Engineering, Xidian University, Xi’an, 710071, China)
,
Chong Laiyuan
(School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an, 710071, China)
,
Hu Jichao
(Department of Electronic Engineering, Xi’an University of Technology, Xi’an, 710048, China)
,
Yuan Hao
(School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an, 710071, China)
,
He Yanjing
(School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an, 710071, China)
,
Guo Hui
(School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an, 710071, China)
,
Zhang Yuming
(School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an, 710071, China)
資料名:
Carbon
(Carbon)
巻:
157
ページ:
340-349
発行年:
2020年
JST資料番号:
H0270B
ISSN:
0008-6223
CODEN:
CRBNA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)