文献
J-GLOBAL ID:202002231940226009
整理番号:20A0899596
固有の低ターンオン電圧と超低逆漏れ電流を持つ三ゲートハイブリッドアノードAlGaN/GaN電力ダイオード【JST・京大機械翻訳】
Tri-Gated Hybrid Anode AlGaN/GaN Power Diode With Intrinsic Low Turn-on Voltage and Ultralow Reverse Leakage Current
著者 (7件):
Zhou Qi
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China)
,
Chen Kuangli
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China)
,
Huang Peng
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China)
,
Han Xiaoqi
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China)
,
Xiong Wei
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China)
,
Chen Wanjun
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China)
,
Zhang Bo
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
67
号:
4
ページ:
1712-1717
発行年:
2020年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)