文献
J-GLOBAL ID:202002231956580329
整理番号:20A0629975
種々の温度で焼結したBa_0.85Ca_0.15Zr_0.1Ti_0.9O_3セラミックの構造,誘電及び強誘電特性【JST・京大機械翻訳】
Structure, dielectric, and ferroelectric properties of Ba0.85Ca0.15Zr0.1Ti0.9O3 ceramics sintered at various temperatures
著者 (14件):
Wang X. W.
(Laboratory of Functional Materials, Scholl of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, People’s Republic of China)
,
Zhang B. H.
(Laboratory of Functional Materials, Scholl of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, People’s Republic of China)
,
Zhang B. H.
(Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, People’s Republic of China)
,
Li Y. Y.
(Laboratory of Functional Materials, Scholl of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, People’s Republic of China)
,
Shi Y. C.
(Laboratory of Functional Materials, Scholl of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, People’s Republic of China)
,
Sun L. Y.
(Laboratory of Functional Materials, Scholl of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, People’s Republic of China)
,
Feng G.
(Laboratory of Functional Materials, Scholl of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, People’s Republic of China)
,
Li C. L.
(Laboratory of Functional Materials, Scholl of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, People’s Republic of China)
,
Liang Y. F.
(Laboratory of Functional Materials, Scholl of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, People’s Republic of China)
,
Zheng Y. P.
(Laboratory of Functional Materials, Scholl of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, People’s Republic of China)
,
Shang S. Y.
(Laboratory of Functional Materials, Scholl of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, People’s Republic of China)
,
Shang J.
(Laboratory of Functional Materials, Scholl of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, People’s Republic of China)
,
Hu Y. C.
(Laboratory of Functional Materials, Scholl of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, People’s Republic of China)
,
Yin S. Q.
(Laboratory of Functional Materials, Scholl of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang, People’s Republic of China)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
31
号:
6
ページ:
4732-4742
発行年:
2020年
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)