文献
J-GLOBAL ID:202002234561975406
整理番号:20A0333805
ニューロモルフィック計算のための3D 1S1R RRAMクロスバアレイにおける熱擾乱の低減【JST・京大機械翻訳】
Reduction of thermal disturbances in 3D 1S1R RRAM crossbar arrays for neuromorphic computing
著者 (5件):
Sun Rui
(School of Microelectronics, Dalian University of Technology, Dalian, 116024, People’s Republic of China)
,
Chen Huan
(School of Microelectronics, Dalian University of Technology, Dalian, 116024, People’s Republic of China)
,
Wang Guanran
(School of Microelectronics, Dalian University of Technology, Dalian, 116024, People’s Republic of China)
,
Wang Chen
(School of Microelectronics, Dalian University of Technology, Dalian, 116024, People’s Republic of China)
,
Hao Liang
(Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian, 116024, People’s Republic of China)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
34
号:
11
ページ:
115023 (7pp)
発行年:
2019年
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)