文献
J-GLOBAL ID:202002238023713088
整理番号:20A0269649
GaN系MISHEMTの性能に及ぼすOhmアニーリング中のSiNキャッピングの影響【JST・京大機械翻訳】
Impact of SiN capping during Ohmic Annealing on Performance of GaN-based MISHEMTs
著者 (5件):
Low R. S.
(Graduate School of Engineering, University of Fukui,3-9-1 Bunkyo, Fukui,Japan,910-8507)
,
Kawabata S.
(Graduate School of Engineering, University of Fukui,3-9-1 Bunkyo, Fukui,Japan,910-8507)
,
Asubar J. T.
(Graduate School of Engineering, University of Fukui,3-9-1 Bunkyo, Fukui,Japan,910-8507)
,
Tokuda H.
(Graduate School of Engineering, University of Fukui,3-9-1 Bunkyo, Fukui,Japan,910-8507)
,
Kuzuhara M.
(Graduate School of Engineering, University of Fukui,3-9-1 Bunkyo, Fukui,Japan,910-8507)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
IMFEDK
ページ:
77-78
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)