文献
J-GLOBAL ID:202002238541780196
整理番号:20A0919140
Alナノ粒子埋め込みIGZOシナプストランジスタで模倣されたシナプス可塑性の調節【JST・京大機械翻訳】
Modulation of Synaptic Plasticity Mimicked in Al Nanoparticle-Embedded IGZO Synaptic Transistor
著者 (16件):
Kim Jeehoon
(Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk, 28644, Republic of Korea)
,
Kim Younghun
(Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk, 28644, Republic of Korea)
,
Kim Younghun
(Materials Center for Energy Convergence, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508, Republic of Korea)
,
Kwon Ojun
(Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk, 28644, Republic of Korea)
,
Kim Taehyeon
(Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk, 28644, Republic of Korea)
,
Oh Seyoung
(Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk, 28644, Republic of Korea)
,
Jin Soeun
(Department of Advanced Materials Engineering, University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea)
,
Park Woojin
(Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk, 28644, Republic of Korea)
,
Kwon Jung-Dae
(Materials Center for Energy Convergence, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508, Republic of Korea)
,
Hong Seung-Woo
(Intelligent Network Research Section, Electronics and Telecommunications Research Institute, 218 Gajeong-ro, Yuseong-gu, Daejeon, 34129, Republic of Korea)
,
Lee Chang-Sik
(Intelligent Network Research Section, Electronics and Telecommunications Research Institute, 218 Gajeong-ro, Yuseong-gu, Daejeon, 34129, Republic of Korea)
,
Ryu Ho-Yong
(Intelligent Network Research Section, Electronics and Telecommunications Research Institute, 218 Gajeong-ro, Yuseong-gu, Daejeon, 34129, Republic of Korea)
,
Hong Seoksu
(Department of Information & Statistics, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk, 28644, Republic of Korea)
,
Kim Jaehoon
(Department of Information & Statistics, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk, 28644, Republic of Korea)
,
Heo Tae-Young
(Department of Information & Statistics, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk, 28644, Republic of Korea)
,
Cho Byungjin
(Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk, 28644, Republic of Korea)
資料名:
Advanced Electronic Materials
(Advanced Electronic Materials)
巻:
6
号:
4
ページ:
e1901072
発行年:
2020年
JST資料番号:
W2482A
ISSN:
2199-160X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)