文献
J-GLOBAL ID:202002238614427484
整理番号:20A1084004
低電力SrCoO_xメモリスタにおけるトポタクチック相変態と抵抗スイッチング挙動の観測【JST・京大機械翻訳】
Observing topotactic phase transformation and resistive switching behaviors in low power SrCoOx memristor
著者 (10件):
Lo Hung-Yang
(Department of Materials Science and Engineering, National Chiao Tung University, No.1001, University Rd., East Dist, Hsinchu, 30010, Taiwan)
,
Yang Chih-Yu
(Department of Materials Science and Engineering, National Chiao Tung University, No.1001, University Rd., East Dist, Hsinchu, 30010, Taiwan)
,
Huang Guan-Ming
(Department of Materials Science and Engineering, National Chiao Tung University, No.1001, University Rd., East Dist, Hsinchu, 30010, Taiwan)
,
Huang Chih-Yang
(Department of Materials Science and Engineering, National Chiao Tung University, No.1001, University Rd., East Dist, Hsinchu, 30010, Taiwan)
,
Chen Jui-Yuan
(Department of Materials Science and Engineering, National United University, No. 1, Gongjing, Miaoli City, Miaoli County 360, Taiwan)
,
Huang Chun-Wei
(Material and Chemical Research Laboratories, Nanotechnology Research Center, Industrial Technology Research Institute, Hsinchu 310, Taiwan)
,
Chu Ying-Hao
(Department of Materials Science and Engineering, National Chiao Tung University, No.1001, University Rd., East Dist, Hsinchu, 30010, Taiwan)
,
Wu Wen-Wei
(Department of Materials Science and Engineering, National Chiao Tung University, No.1001, University Rd., East Dist, Hsinchu, 30010, Taiwan)
,
Wu Wen-Wei
(Center for the Intelligent Semiconductor Nano-system Technology Research, National Chiao Tung University, Hsinchu, 30010, Taiwan)
,
Wu Wen-Wei
(Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan)
資料名:
Nano Energy
(Nano Energy)
巻:
72
ページ:
Null
発行年:
2020年
JST資料番号:
W3116A
ISSN:
2211-2855
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)