文献
J-GLOBAL ID:202002241744356533
整理番号:20A2018294
単層二硫化モリブデンの成長機構を明らかにするための化学蒸着の高温その場研究【JST・京大機械翻訳】
High-Temperature In Situ Investigation of Chemical Vapor Deposition to Reveal Growth Mechanisms of Monolayer Molybdenum Disulfide
著者 (7件):
Xue Hao
(Institute of Functional Crystals, and Tianjin Key Laboratory of Functional Crystal Materials, Tianjin University of Technology, China)
,
Wu Guozheng
(Institute of Functional Crystals, and Tianjin Key Laboratory of Functional Crystal Materials, Tianjin University of Technology, China)
,
Zhao Bojin
(Institute of Functional Crystals, and Tianjin Key Laboratory of Functional Crystal Materials, Tianjin University of Technology, China)
,
Wang Di
(Institute of Functional Crystals, and Tianjin Key Laboratory of Functional Crystal Materials, Tianjin University of Technology, China)
,
Wang Di
(Physics and Electronic Engineering School, Jiangsu Second Normal University, China)
,
Wu Xiaoming
(Laboratory of Display Materials and Photoelectric Device (Ministry of Education), and Laboratory for Photoelectric Materials and Devices & National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, China)
,
Hu Zhanggui
(Institute of Functional Crystals, and Tianjin Key Laboratory of Functional Crystal Materials, Tianjin University of Technology, China)
資料名:
ACS Applied Electronic Materials
(ACS Applied Electronic Materials)
巻:
2
号:
7
ページ:
1925-1933
発行年:
2020年
JST資料番号:
W5669A
ISSN:
2637-6113
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)