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J-GLOBAL ID：202002243788793567
整理番号：20A1184174
不揮発性強誘電分域により制御されたプログラム可能な遷移金属ジカルコゲン化物ホモ接合【JST・京大機械翻訳】
Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains
Wu Guangjian
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)
,
Wu Guangjian
(National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Tian Bobo
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)
,
Tian Bobo
(Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, China)
,
Liu Lan
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)
,
Liu Lan
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China)
,
Lv Wei
(School of Electronic Science and Engineering, Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing, China)
,
Wu Shuang
(State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE) and Department of Physics, Fudan University, Shanghai, China)
,
Wang Xudong
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)
,
Chen Yan
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)
,
Li Jingyu
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China)
,
Wang Zhen
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)
,
Wu Shuaiqin
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)
,
Shen Hong
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)
,
Lin Tie
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)
,
Zhou Peng
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China)
,
Liu Qi
(Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Duan Chungang
(Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, China)
,
Zhang Shantao
(National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
,
Meng Xiangjian
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)
,
Wu Shiwei
(State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE) and Department of Physics, Fudan University, Shanghai, China)
,
Hu Weida
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)
,
Wang Xinran
(School of Electronic Science and Engineering, Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing, China)
,
Chu Junhao
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)
,
Wang Jianlu
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)
資料名：
Nature Electronics
(Nature Electronics)
巻： 3 号： 1 ページ： 43-50 発行年： 2020年
JST資料番号： W4776A ISSN： 2520-1131 資料種別： 逐次刊行物 (A)
記事区分： 原著論文 発行国： ドイツ (DEU) 言語： 英語 (EN)
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