文献
J-GLOBAL ID:202002244477973727
整理番号:20A1884618
RFマグネトロンスパッタリング法で作製したZnO多結晶薄膜の残留光電流特性に及ぼす酸素アシスト再結合の影響
Influence of oxygen assisted recombination on persistent photocurrent characteristics of ZnO polycrystalline thin films prepared by RF magnetron sputtering
著者 (6件):
Worasawat Suchada
(Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan)
,
Worasawat Suchada
(Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan)
,
Neo Yoichiro
(Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan)
,
Hatanaka Yoshinori
(Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan)
,
Pecharapa Wisanu
(College of Nanotechnology, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, 10520, Thailand)
,
Mimura Hidenori
(Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan)
資料名:
Japanese Journal of Applied Physics
(Japanese Journal of Applied Physics)
巻:
59
号:
7
ページ:
075505 (8pp)
発行年:
2020年07月
JST資料番号:
G0520B
ISSN:
0021-4922
CODEN:
JJAPB6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)