文献
J-GLOBAL ID:202002244634776848
整理番号:20A2258173
整流マルチレベル状態を持つ自己選択メモリデバイスに基づく自己活性化ニューラルネットワーク【JST・京大機械翻訳】
Self-Activation Neural Network Based on Self-Selective Memory Device With Rectified Multilevel States
著者 (13件):
Wang Zongwei
(Institute of Microelectronics, Peking University, Beijing, China)
,
Zheng Qilin
(Institute of Microelectronics, Peking University, Beijing, China)
,
Kang Jian
(Institute of Microelectronics, Peking University, Beijing, China)
,
Yu Zhizhen
(Institute of Microelectronics, Peking University, Beijing, China)
,
Zhong Guofang
(Department of Engineering, University of Cambridge, Cambridge, U.K.)
,
Ling Yaotian
(Institute of Microelectronics, Peking University, Beijing, China)
,
Bao Lin
(Institute of Microelectronics, Peking University, Beijing, China)
,
Bao Shengyu
(Institute of Microelectronics, Peking University, Beijing, China)
,
Bai Guandong
(Department of Engineering, University of Cambridge, Cambridge, U.K.)
,
Zheng Shan
(Institute of Microelectronics, Peking University, Beijing, China)
,
Cai Yimao
(Institute of Microelectronics, Peking University, Beijing, China)
,
Robertson John
(Department of Engineering, University of Cambridge, Cambridge, U.K.)
,
Huang Ru
(Institute of Microelectronics, Peking University, Beijing, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
67
号:
10
ページ:
4166-4171
発行年:
2020年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)