文献
J-GLOBAL ID:202002246767408840
整理番号:20A0840750
フッ素化グラフェンにおける電子輸送に及ぼすフッ素パターンの影響【JST・京大機械翻訳】
Effect of Fluorine Patterns on Electronic Transport in Fluorinated Graphene
著者 (7件):
Yamaletdinov Ruslan D.
(Laboratory of nanomaterials, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, Russia, 630090)
,
Yamaletdinov Ruslan D.
(Laboratory of quantum chemistry, Boreskov Institute of Catalysis SB RAS, Novosibirsk, Russia, 630090)
,
Katkov Vsevolod L.
(Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research, Dubna, Moscow Region, Russia, 141980)
,
Nikiforov Yaroslav A.
(Department of Natural Sciences, Novosibirsk State University, Novosibirsk, Russia, 630090)
,
Okotrub Alexander V.
(Laboratory of nanomaterials, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, Russia, 630090)
,
Okotrub Alexander V.
(Department of Natural Sciences, Novosibirsk State University, Novosibirsk, Russia, 630090)
,
Osipov Vladimir A.
(Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research, Dubna, Moscow Region, Russia, 141980)
資料名:
Advanced Theory and Simulations
(Advanced Theory and Simulations)
巻:
3
号:
4
ページ:
e1900199
発行年:
2020年
JST資料番号:
W2665A
ISSN:
2513-0390
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)