文献
J-GLOBAL ID:202002246832288687
整理番号:20A2501613
液体注入MOCVDを用いたサファイア基板上のα-およびβ-Ga_2O_3エピタキシャル層の成長【JST・京大機械翻訳】
Growth of α- and β-Ga2O3 epitaxial layers on sapphire substrates using liquid-injection MOCVD
著者 (9件):
Egyenes-Porsok F
( Institute of Electrical Engineering SAS, Dubravska cesta 9, 84104, Bratislava, Slovakia)
,
Gucmann F
( Institute of Electrical Engineering SAS, Dubravska cesta 9, 84104, Bratislava, Slovakia)
,
Husekova K
( Institute of Electrical Engineering SAS, Dubravska cesta 9, 84104, Bratislava, Slovakia)
,
Dobrocka E
( Institute of Electrical Engineering SAS, Dubravska cesta 9, 84104, Bratislava, Slovakia)
,
Sobota M
( Institute of Electrical Engineering SAS, Dubravska cesta 9, 84104, Bratislava, Slovakia)
,
Sobota M
( Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovicova 3, 81219, Bratislava, Slovakia)
,
Mikolasek M
( Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovicova 3, 81219, Bratislava, Slovakia)
,
Frohlich K
( Institute of Electrical Engineering SAS, Dubravska cesta 9, 84104, Bratislava, Slovakia)
,
Tapajna M
( Institute of Electrical Engineering SAS, Dubravska cesta 9, 84104, Bratislava, Slovakia)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
35
号:
11
ページ:
115002 (10pp)
発行年:
2020年
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)