文献
J-GLOBAL ID:202002247539802988
整理番号:20A0609384
単結晶立方基板上のアルミニウム誘起結晶化によるシリコン薄膜の表面方位制御【JST・京大機械翻訳】
Surface-orientation control of silicon thin films via aluminum-induced crystallization on monocrystalline cubic substrates
著者 (12件):
Hainey Mel
(Department of Materials Process Engineering, Nagoya University, Nagoya 464-8603, Japan)
,
Hainey Mel
(Department of Materials Science and Engineering, University of California-Los Angeles, Los Angeles, USA)
,
Hainey Mel
(Polytech Cleremont-Ferrand, Universite Clermont Auvergne, 63172 Aubiere cedex, France)
,
Zhou Eddie (Chenhui)
(Department of Materials Process Engineering, Nagoya University, Nagoya 464-8603, Japan)
,
Zhou Eddie (Chenhui)
(Department of Materials Science and Engineering, University of California-Los Angeles, Los Angeles, USA)
,
Zhou Eddie (Chenhui)
(Polytech Cleremont-Ferrand, Universite Clermont Auvergne, 63172 Aubiere cedex, France)
,
Viguerie Loic
(Department of Materials Process Engineering, Nagoya University, Nagoya 464-8603, Japan)
,
Viguerie Loic
(Department of Materials Science and Engineering, University of California-Los Angeles, Los Angeles, USA)
,
Viguerie Loic
(Polytech Cleremont-Ferrand, Universite Clermont Auvergne, 63172 Aubiere cedex, France)
,
Usami Noritaka
(Department of Materials Process Engineering, Nagoya University, Nagoya 464-8603, Japan)
,
Usami Noritaka
(Department of Materials Science and Engineering, University of California-Los Angeles, Los Angeles, USA)
,
Usami Noritaka
(Polytech Cleremont-Ferrand, Universite Clermont Auvergne, 63172 Aubiere cedex, France)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
533
ページ:
Null
発行年:
2020年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)