文献
J-GLOBAL ID:202002248425870333
整理番号:20A1192359
透明SiC基板上の遷移金属窒化物エピタクシー中の成長誘起温度変化【JST・京大機械翻訳】
Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates
著者 (6件):
Scott Katzer Douglas
(U.S. Naval Research Laboratory, Electronics Science and Technology Division, 4555 Overlook Avenue, S.W., Washington, DC 20375-5347)
,
Hardy Matthew T.
(U.S. Naval Research Laboratory, Electronics Science and Technology Division, 4555 Overlook Avenue, S.W., Washington, DC 20375-5347)
,
Nepal Neeraj
(U.S. Naval Research Laboratory, Electronics Science and Technology Division, 4555 Overlook Avenue, S.W., Washington, DC 20375-5347)
,
Downey Brian P.
(U.S. Naval Research Laboratory, Electronics Science and Technology Division, 4555 Overlook Avenue, S.W., Washington, DC 20375-5347)
,
Jin Eric N.
(U.S. Naval Research Laboratory, Electronics Science and Technology Division, 4555 Overlook Avenue, S.W., Washington, DC 20375-5347)
,
Meyer David J.
(U.S. Naval Research Laboratory, Electronics Science and Technology Division, 4555 Overlook Avenue, S.W., Washington, DC 20375-5347)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
38
号:
3
ページ:
032204-032204-7
発行年:
2020年
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)