文献
J-GLOBAL ID:202002248503507177
整理番号:20A0493383
自己加熱効果を考慮したTHz乗算器設計のためのGaN Schottkyダイオードモデル【JST・京大機械翻訳】
GaN Schottky Diode Model for THz Multiplier Design with Consideration of Self-heating Effect
著者 (11件):
Song Xubo
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China)
,
Wang Yuangang
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China)
,
Feng Zhihong
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China)
,
Lv Yuanjie
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China)
,
Zhang Yamin
(Laboratory of Semiconductor Device Reliability Physics, Beijing University of Technology,Beijing,China)
,
Zhang Lisen
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China)
,
Liang Shixiong
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China)
,
Tan Xin
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China)
,
Dun Shaobo
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China)
,
Yang Dabao
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China)
,
Zhang Zhirong
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
ASICON
ページ:
1-3
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)